17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching
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چکیده
منابع مشابه
Reactive ion etching
The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...
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Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...
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In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...
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OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK
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Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications Prakash N. K. Deenapanray1*,y, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia Department of Engineering, FEIT, The Australian National University, ...
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ژورنال
عنوان ژورنال: International Journal of Photoenergy
سال: 2012
ISSN: 1110-662X,1687-529X
DOI: 10.1155/2012/248182